Thin film interactions of Al and Al(Cu) on TiW
- 1 November 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (9) , 3444-3448
- https://doi.org/10.1063/1.335765
Abstract
Thin-film reactions of Al/Ti22W78 (∼10 wt. % Ti) with and without ∼2 at. % Cu in the Al were investigated by transmission electron microscopy for vacuum annealing in the temperature range 300–600 °C. The reactions are nonuniform and the presence of Cu has little effect on the reaction kinetics. Reactions are grain boundary dominated and start at 400 °C with the formation of WAl12.This publication has 10 references indexed in Scilit:
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