Structure of TiN films deposited on heated and negatively biased silicon substrates
- 1 July 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 215 (1) , 8-13
- https://doi.org/10.1016/0040-6090(92)90693-6
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Reactively sputtered TiN as a diffusion barrier between Cu and SiJournal of Applied Physics, 1990
- Thermal stability of TiN films deposited onto silicon substratesThin Solid Films, 1989
- Performance and failure mechanisms of TiN diffusion barrier layers in submicron devicesJournal of Applied Physics, 1989
- Failure mechanisms of TiN thin film diffusion barriersThin Solid Films, 1988
- Investigation of reactively sputtered TiN films for diffusion barriersThin Solid Films, 1986
- Performance of titanium nitride diffusion barriers in aluminum–titanium metallization schemes for integrated circuitsJournal of Vacuum Science & Technology A, 1985
- TiN as a high temperature diffusion barrier for arsenic and boronThin Solid Films, 1984
- Thermal Stability of Hafnium and Titanium Nitride Diffusion Barriers in Multilayer Contacts to SiliconJournal of the Electrochemical Society, 1983
- Characteristics of TiN gate metal-oxide-semiconductor field effect transistorsJournal of Applied Physics, 1983
- Electrical characteristics of TiN contacts to N siliconJournal of Applied Physics, 1981