Electrical characterization of anodically bonded wafers
- 1 June 1998
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 8 (2) , 69-73
- https://doi.org/10.1088/0960-1317/8/2/006
Abstract
The anodic bonding of silicon with glass influences the electrical characteristics of the bonded silicon. This paper shows that the resistivity at the surface of the n-type silicon and the breakdown voltage of p-n junctions decrease, and that the leakage currents increase, as a result of the charging effects in the glass.Keywords
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