Structure of thin films prepared by the cosputtering of titanium and aluminium or titanium and silicon
- 1 August 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 82 (4) , 313-320
- https://doi.org/10.1016/0040-6090(81)90474-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Properties of silicon nitride thin films obtained by reactive sputteringThin Solid Films, 1980
- Properties of TiNxfilms reactively sputtered in an argon-nitrogen atmosphereThin Solid Films, 1979
- Structural and electrical properties of Ti-Al thin filmsThin Solid Films, 1979
- Effect of secondary electrons and negative ions on sputtering of filmsJournal of Vacuum Science and Technology, 1976
- Structures and resistive properties of sputtered TiZrAlN thin filmsThin Solid Films, 1972