Radiation Hardening of Thermal Oxides on Silicon via Ion Implantation
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 16 (6) , 203-206
- https://doi.org/10.1109/tns.1969.4325527
Abstract
Implantation of thermal oxide on silicon with 1016 N2+ cm-2 at an energy of 50 keV reduces the space charge buildup observed in the oxide when exposed subsequently to ionizing radiation. The component of radiation-induced charge buildup in the oxide attributable to the increase in fast surface states at the oxide-silicon interface is largely unaffected.Keywords
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