In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates
- 1 March 1999
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 141 (1-2) , 101-106
- https://doi.org/10.1016/s0169-4332(98)00605-9
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxyApplied Physics Letters, 1998
- Direct formation of vertically coupled quantum dots in Stranski-Krastanow growthPhysical Review B, 1996
- An intermediate (1.0–1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxySurface Science, 1996
- Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfacesApplied Physics Letters, 1996
- Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surfaceApplied Physics Letters, 1995
- In situ fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor depositionApplied Physics Letters, 1995
- Structural characterization of (In,Ga)As quantum dots in a GaAs matrixPhysical Review B, 1995
- InAs/GaAs quantum dots radiative recombination from zero‐dimensional statesPhysica Status Solidi (b), 1995
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994