Anti-domain-free GaP, grown in atomically flat (001) Si sub-μm-sized openings
- 17 June 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (24) , 4546-4548
- https://doi.org/10.1063/1.1485311
Abstract
We demonstrate a method for growth of GaPnanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-μm-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emissionscanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaPnanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.Keywords
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