Annealing behavior of Ga+ implanted GaAs/AlGaAs observed by transmission electron microscopy
- 1 July 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (1) , 318-320
- https://doi.org/10.1063/1.339152
Abstract
The structural aspects and annealing behavior of induced damage by Ga+ ion implantation of a GaAs single quantum well as investigated by transmission electron microscopy are presented. After rapid thermal annealing, vacancy and interstitial perfect dislocation loops are found on 〈110〉 and 〈111〉 type planes. In contrast to previous results from superlattices of AlGaAs/GaAs, we find dislocation loops in the AlGaAs as well as in the GaAs layer. The cathodoluminescence intensity of the implanted quantum well recovers completely after annealing.This publication has 7 references indexed in Scilit:
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