Defects in Ga+ Jon Implanted GaAs–AlAs MQW Structures
- 1 November 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (11A) , L912
- https://doi.org/10.1143/jjap.25.l912
Abstract
Cross-sectional transmission electron microscope observation was performed on GaAs–AlAs multi-quantum-well(MQW) structures which were compositionally disordered by ion implantation of the constituent element Ga+ and subsequent heat-treatment, and compared with MQW structures implanted by other species of ions As+, Si+ and Ar+. It was found that most of the defects introduced by ion implantation of Ga+ are annealed out by heat treatment at 750°C for 60 minutes, and that this is also the case for defects introduced by ion implantation by another constituent element As+, while many of the defects introduced by Si+ and Ar+ ion implantation remain without being annealed out.Keywords
This publication has 12 references indexed in Scilit:
- Lateral GaAs Photodetector Fabricated by Ga Focused-Jon-Beam ImplantationJapanese Journal of Applied Physics, 1986
- Damage Profile in GaAs, AlAs, AlGaAs, and GaAs/AlGaAs Superlattices Induced by Si+-Ion ImplantationJapanese Journal of Applied Physics, 1986
- Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam ImplantationJapanese Journal of Applied Physics, 1985
- Electrical Properties of Ga Ion Beam Implanted GaAs EpilayerJapanese Journal of Applied Physics, 1985
- Transmission electron microscope observation of lattice image of AlxGa1−xAs-AlyGa1−yAs superlattices with high contrastJournal of Applied Physics, 1985
- Ion-Species Dependence of Interdiffusion in Ion-Implanted GaAs-AlAs SuperlatticesJapanese Journal of Applied Physics, 1985
- High Contrast TEM Observation of Lattice Image of GaAs-Al0.28Ga0.72As Superlattice with [100] Electron Beam IncidenceJapanese Journal of Applied Physics, 1985
- Compositional Disordering of GaAs-AlxGa1-xAs Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure FabricationJapanese Journal of Applied Physics, 1985
- Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion sourceJournal of Vacuum Science & Technology B, 1983
- Direct Observation of Lattice Arrangement in MBE Grown GaAs–AlGaAs SuperlatticesJapanese Journal of Applied Physics, 1983