Scanning tunneling microscopy study of two-dimensional nuclei on GaAs grown by metalorganic chemical vapor deposition

This publication has 15 references indexed in Scilit:

• Scanning Tunneling Microscopy Study of GaAs Step Structures on Vicinal Substrate Grown by Metalorganic Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 1994
• Scanning tunneling microscopy observation of monolayer steps on GaAs(001) vicinal surfaces grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1993
• Time-resolved x-ray scattering studies of layer-by-layer epitaxial growth
  Physical Review Letters, 1992
• Surface evolution during molecular-beam epitaxy deposition of GaAs
  Physical Review Letters, 1992
• Multi-Atomic Steps on Metalorganic Chemical Vapor Deposition-Grown GaAs Vicinal Surfaces Studied by Atomic Force Microscopy
  Japanese Journal of Applied Physics, 1992
• Step-density dependence of growth rate on vicinal surface of MOCVD
  Journal of Crystal Growth, 1991
• Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high-energy electron diffraction
  Journal of Vacuum Science & Technology B, 1990
• Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs
  Japanese Journal of Applied Physics, 1988
• Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements
  Applied Physics Letters, 1985
• The growth of crystals and the equilibrium structure of their surfaces
  Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951