Scanning tunneling microscopy observation of monolayer steps on GaAs(001) vicinal surfaces grown by metalorganic chemical vapor deposition

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Abstract
Using scanning tunneling microscopy (STM), we have observed monolayer steps for the first time on (001)GaAs vicinal surfaces grown by metalorganic chemical vapor deposition (MOCVD). The surface was passivated with As to protect it from air during the transfer from the MOCVD to the STM. We found that the monolayer step edges on the surface misoriented in the [110] direction undulate with about 2 times larger amplitude than the surface misoriented in the [1̄10] direction.