The numerical analysis of anomalous doping profiles of phosphorus in silicon
- 1 April 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (4) , 355-359
- https://doi.org/10.1016/0038-1101(79)90086-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Excess vacancy generation mechanism at phosphorus diffusion into siliconJournal of Applied Physics, 1974
- Computer calculations of impurity profiles in silicon (I)Physica Status Solidi (a), 1973
- Concentration-Dependent Diffusion of Boron and Phosphorus in SiliconJournal of Applied Physics, 1970
- Anomalous diffusion in semiconductorsȁa quantitative analysisSolid-State Electronics, 1970
- General Theory of Impurity Diffusion in Semiconductors via the Vacancy MechanismPhysical Review B, 1969