Continuous-time observation of pseudo-vacancy diffusion at Si(111)-7 × 7 surfaces
- 20 November 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 367 (2) , L47-L53
- https://doi.org/10.1016/s0039-6028(96)00991-0
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Field ion microscope studies of single-atom surface diffusion and cluster nucleation on metal surfacesSurface Science Reports, 1994
- Direct measurement of diffusion by hot tunneling microscopy: Activation energy, anisotropy, and long jumpsPhysical Review Letters, 1992
- Surface diffusion and phase transition on the Ge(111) surface studied by scanning tunneling microscopyPhysical Review Letters, 1991
- Observation of surface reconstruction on silicon above 800 °C using the STMNature, 1991
- Displacement distributions in diffusion by atomic replacement: Ir atoms on Ir surfacesPhysical Review B, 1991
- Experimental studies of the behaviour of single adsorbed atoms on solid surfacesReports on Progress in Physics, 1988
- Surface Studies by Scanning Tunneling MicroscopyPhysical Review Letters, 1982
- Direct observation of surface diffusion and atomic interactions on metal surfacesSurface Science, 1978
- Atomic Displacements in One- and Two-Dimensional DiffusionThe Journal of Chemical Physics, 1966
- Atomic View of Surface Self-Diffusion: Tungsten on TungstenThe Journal of Chemical Physics, 1966