A simple model for scaled MOS transistors that includes field-dependent mobility
- 1 February 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 22 (1) , 111-114
- https://doi.org/10.1109/jssc.1987.1052681
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- The classical versus the quantum mechanical model of mobility degradation due to the gate field in MOSFET inversion layersIEEE Transactions on Electron Devices, 1985
- The effect of high fields on MOS device and circuit performanceIEEE Transactions on Electron Devices, 1984
- Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layerIEEE Transactions on Electron Devices, 1983
- High-field drift velocity of electrons at the Si–SiO2 interface as determined by a time-of-flight techniqueJournal of Applied Physics, 1983
- MOS Device and technology constraints in VLSIIEEE Transactions on Electron Devices, 1982
- A new method to determine MOSFET channel lengthIEEE Electron Device Letters, 1980
- Velocity of surface carriers in inversion layers on siliconSolid-State Electronics, 1980
- Characterization of the electron mobility in the inverted Si surfacePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974
- An accurate large-signal MOS transistor model for use in computer-aided designIEEE Transactions on Electron Devices, 1972