Quantum- and transport electron mobility in the individual subbands of a two-dimensional electron gas in Si-δ-doped GaAs
- 1 March 1992
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 177 (1-4) , 485-490
- https://doi.org/10.1016/0921-4526(92)90155-l
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAsApplied Physics Letters, 1990
- Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °CSemiconductor Science and Technology, 1990
- Delta doping of III–V compound semiconductors: Fundamentals and device applicationsJournal of Vacuum Science & Technology A, 1990
- Evidence of a mobility edge in the second subband of anAs-GaAs heterojunctionPhysical Review B, 1988
- Determination of electrical transport properties using a novel magnetic field-dependent Hall techniqueJournal of Applied Physics, 1987
- Single-particle relaxation time versus scattering time in an impure electron gasPhysical Review B, 1985
- Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunctionPhysical Review B, 1985