Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C
Open Access
- 1 August 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (8) , 861-866
- https://doi.org/10.1088/0268-1242/5/8/010
Abstract
No abstract availableKeywords
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