Interfacial reactions in single-crystal-TiN (100)/Al/polycrystalline-TiN multilayer thin films
- 1 August 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 215 (2) , 152-161
- https://doi.org/10.1016/0040-6090(92)90430-j
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Microstructure modification of TiN by ion bombardment during reactive sputter depositionPublished by Elsevier ,2002
- Failure mechanisms of TiN thin film diffusion barriersThin Solid Films, 1988
- Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during depositionJournal of Crystal Growth, 1988
- TiAl2: A reentrant phase in the Ti-Al systemPhysica Status Solidi (a), 1988
- One-Dimensional Antiphase Domain Structures in the Aluminum-Rich Al-Ti AlloysJapanese Journal of Applied Physics, 1986
- Applying optical methods to aid in linewidth control for the development of sub-half-micron geometriesJournal of Vacuum Science & Technology B, 1986
- Solute effect of Cu on interdiffusion inTi compound filmsPhysical Review B, 1985
- The ternary system titanium-aluminum-nitrogenJournal of Solid State Chemistry, 1984
- Kinetics of nitride formation on titanium targets during reactive sputteringSurface Science, 1983
- TiSi2/TiN–A Stable Multilayered Contact Structure for Shallow Implanted Junctions in VLSI TechnologyPhysica Scripta, 1983