Properties of 100 K InP(110) cleaved surface and relevant Schottky diodes
- 3 December 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 178 (1-3) , 158-163
- https://doi.org/10.1016/0039-6028(86)90291-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Comparison between GaAs(110) and InP(110) surface properties induced by cleavage defects and by oxygen adsorptionSurface Science, 1985
- Formation de l'interface métal/InP et de diodes Schottky sur InPRevue de Physique Appliquée, 1984
- Sur l'analyse de l'ancrage du niveau de Fermi à la surface des composés III-VJournal de Physique, 1984
- Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compoundsThin Solid Films, 1982
- Exciton Absorption and Emission in InPPhysical Review B, 1964