Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasers emitting at 980nm

This publication has 9 references indexed in Scilit:

• Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
  Applied Physics Letters, 2000
• Efficient high-temperature CW lasing operationof oxide-confinedlong-wavelength InAs quantum dot lasers
  Electronics Letters, 2000
• Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
  Applied Physics Letters, 1999
• Single transverse mode operation of long wavelength(~1.3 µm)InAs GaAs quantum dot laser
  Electronics Letters, 1999
• 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
  IEEE Photonics Technology Letters, 1999
• 3.5 W CW operation of quantum dot laser
  Electronics Letters, 1999
• High-performance GaInAs/GaAs quantum-dot lasers based on a single active layer
  Applied Physics Letters, 1999
• High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers
  Applied Physics Letters, 1998
• Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
  Applied Physics Letters, 1996