Transverse 1/f noise in InSb thin films and the signal-to-noise ratio of related Hall elements
- 1 December 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (12) , 5990-5996
- https://doi.org/10.1063/1.324567
Abstract
Transverse 1/f noise in approximately 2‐μm‐thick InSb thin films is investigated experimentally at room temperature. Linear dependence of noise voltage on dc bias current is shown quantitatively. The noise intensity is inversely proportional to the number of conduction electrons in the bulk. The temperature rise of specimens due to Joule heating does not affect the noise intensity coefficient. The coefficient differs from sample to sample, which is reduced by the heat treatment of specimens, but is independent of the doped impurity concentration. As a result, the signal‐to‐noise ratio of related Hall elements is formulated for the first time for audio magnetic heads applications. The signal‐to‐noise ratio is nearly 80 dB for a 10‐G magnetic field in the audio frequency range.This publication has 18 references indexed in Scilit:
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