Modeling hysteretic current-voltage characteristics for resonant tunneling diodes
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 14 (9) , 1098-1103
- https://doi.org/10.1109/43.406702
Abstract
A simple macro circuit is described to model the hysteretic current-voltage characteristics of resonant tunneling diodes for SPICE simulation. The switch model in SPICE can be utilized to simulate the hysteretic characteristics. A multistate “hysteretic” memory cell based on resonant tunneling diodes with hysteretic current-voltage characteristic is also described and simulated using the proposed macro circuit model. The technique can also be used to model any hysteretic characteristic in generalKeywords
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