Lattice relaxation, radiative and non-radiative deexcitation at localized defects
- 1 January 1983
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 72 (1) , 55-72
- https://doi.org/10.1080/00337578308218626
Abstract
The influence of defect-lattice coupling on energy structure and recombination processes at localized defects is discussed. The emphasis is put on those processes in which the charge state of the defect changes. Among the topics discussed are: extrinsic self-trapping, negative U defects, metastable defect states, multiphonon recombination and recombination induced defect reactions.Keywords
This publication has 58 references indexed in Scilit:
- Negative-U Properties for Point Defects in SiliconPhysical Review Letters, 1980
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- Recombination enhanced defect reactionsSolid-State Electronics, 1978
- Non-radiative de-excitation of deep centresSolid-State Electronics, 1978
- The initial protection of defects in alkali halides: F and H centre production by non-radiative decay of the self-trapped excitonJournal of Physics C: Solid State Physics, 1977
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Temperature dependences ofradiative and nonradiative transitions in ruby and emeraldPhysical Review B, 1975
- Thermal capture of electrons in siliconAnnals of Physics, 1957