Bulk tunneling contribution to the reverse breakdown characteristics of InSb gate controlled diodes
- 1 December 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (12) , 1289-1293
- https://doi.org/10.1016/0038-1101(87)90054-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Gate-controlled Hg1−xCdxTe photodiodes passivated with native sulfidesJournal of Vacuum Science & Technology A, 1986
- Tunnel contribution to Hg1−xCdxTe and Pb1−xSnxTe p−n junction diode characteristicsInfrared Physics, 1980
- Improved performance of implanted n+-p Hg1-xCdxTe photodiodes using insulated field platesIEEE Electron Device Letters, 1980
- Diffusion Properties of Cadmium in Indium AntimonideJournal of the Electrochemical Society, 1978