Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface
- 1 April 1998
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (4) , 353-357
- https://doi.org/10.1007/s11664-998-0414-7
Abstract
No abstract availableKeywords
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