Influence of Ohmic Contacts on Semi-Insulating GaAs Detector Performances
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Performance of a new ohmic contact for GaAs particle detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Evidence for field enhanced electron capture by EL2 centers in semi-insulating GaAs and the effect on GaAs radiation detectorsJournal of Applied Physics, 1994
- Analysis of I–V measurements on PtSi-Si Schottky structures in a wide temperature rangeSolid-State Electronics, 1991
- C-V analysis of the Schottky barrier in semi-insulating semiconductorsJournal of Applied Physics, 1991
- The Conductive ModePublished by Elsevier ,1989
- Photoinduced current transient spectroscopy in high-resistivity bulk materials: Instrumentation and methodologyJournal of Applied Physics, 1988
- Evaluation of diffusion lengths and surface recombination velocities from electron beam induced current scansApplied Physics Letters, 1983
- Photo-deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductorsJournal of Applied Physics, 1983
- The concept of screening length in lifetime and relaxation semiconductorsJournal of Physics and Chemistry of Solids, 1980
- Metal-semiconductor contacts for GaAs bulk effect devicesSolid-State Electronics, 1967