Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide
- 1 April 1998
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (4) , 370-376
- https://doi.org/10.1007/s11664-998-0417-4
Abstract
No abstract availableKeywords
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