Initial stage of sputtering in silicon oxide
- 1 February 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (3) , 244-246
- https://doi.org/10.1063/1.93902
Abstract
The effect of argon ion bombardment on a silicon oxide film prepared on a Si(111) surface by dry oxidation was investigated by measuring partial yield spectra in addition to the oxygen induced Si 2p core level shift. The experimental observations can be understood such that the SiO2 network is decomposed at the initial stage of argon ion bombardment. In the following stage of bombardment, the silicon oxide films are sputter etched resulting in a decrease in the oxide film thickness.Keywords
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