Ge Distribution in Gen/Sim Strained-Layer Superlattices
- 1 November 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (11A) , L1511
- https://doi.org/10.1143/jjap.31.l1511
Abstract
Ge n /Si m strained-layer superlattices (SLSs) grown by molecular beam epitaxy were investigated by the X-ray diffraction method. The diffraction intensities of Ge4/Si12 SLSs were analyzed with surface segregation models. It has been found that surface segregation does not involve 1 ML but 2-3 ML of the Ge top layer, and that the smearing decay length is about 4.5 ML.Keywords
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