Extension of Existing Models to Ion-Implanted MESFET's

This publication has 15 references indexed in Scilit:

• Graded channel FET's: Improved linearity and noise figure
  IEEE Transactions on Electron Devices, 1978
• Profile design for distortion reduction in microwave field-effect transistors
  Electronics Letters, 1978
• Bias dependence of GaAs and InP MESFET parameters
  IEEE Transactions on Electron Devices, 1977
• Ion-implanted threshold tailoring for insulated gate field-effect transistors
  IEEE Transactions on Electron Devices, 1977
• Analysis of field distributions in a GaAs m.e.s.f.e.t. at large drain voltages
  Electronics Letters, 1976
• Field distribution in junction field-effect transistors at large drain voltages
  IEEE Transactions on Electron Devices, 1975
• Current saturation and small-signal characteristics of GaAs field-effect transistors
  IEEE Transactions on Electron Devices, 1973
• Charge neutrality in semiconductors with implanted impurity profiles
  Solid-State Electronics, 1971
• Small signal properties of field effect devices
  IEEE Transactions on Electron Devices, 1965
• Field-dependent mobility analysis of the field-effect transistor
  Proceedings of the IEEE, 1965