Ion beam mixing of Pt/GaAs and formation of ohmic contacts
- 15 July 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (2) , 560-562
- https://doi.org/10.1063/1.333948
Abstract
Alloying was observed in the Pt/GaAs system, induced by ion beam mixing using Si+, Ar+, and Ge+ beams at room temperature. A 2.3-MeV He+ backscattering measurement showed that an alloyed layer was formed at the Pt/GaAs interface when these ions were implanted through Pt into GaAs, and that the thickness of the layer was proportional to the mass of the incident ion for a constant dose. Ohmic contacts were realized utilizing Si+ ion beam mixing in the Pt/GaAs system.This publication has 4 references indexed in Scilit:
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