Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing
- 18 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (20) , 2463-2465
- https://doi.org/10.1063/1.106934
Abstract
We report successful intermixing of strained InGaAs/GaAs quantum wells utilizing SiO2 with rapid thermal annealing and application of this technique to create a strained InGaAs single quantum well (SQW) laser with a monolithic saturable absorber section. The InGaAs SQW in the gain section was blue‐shifted relative to that in the absorber section to obtain strong absorption and its saturation. The output power of the device jumps abruptly to a level higher than 10 mW when the dc injection current reaches the threshold of 58 mA. Gain‐switched pulses have pulsewidth of 34.4 ps and high peak power of 330 mW.Keywords
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