Ultra-thin Nitride/oxide Stack Dielectric Produced By In-situ Jet Vapor Deposition
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 172-176
- https://doi.org/10.1109/vtsa.1997.614752
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Ultra-thin silicon nitride films on Si by jet vapor depositionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Extending gate dielectric scaling limit by use of nitride or oxynitridePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969