Structural variation of epitaxial InP/GaAs/Si films at thermal treatment
- 31 July 1991
- journal article
- Published by Elsevier in Materials Letters
- Vol. 11 (8-9) , 236-240
- https://doi.org/10.1016/0167-577x(91)90193-a
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Stress variation in epitaxial GaAs films on silicon under thermal treatmentThin Solid Films, 1990
- Growth of GaAs and InP on Si using plasma stimulated MOCVDJournal of Crystal Growth, 1989
- Rhombohedral distortion of EuS epitaxial films on Si(111) substratesThin Solid Films, 1987
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978