Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures

13 January 1992

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 60 (2) , 195-197
https://doi.org/10.1063/1.106961

Abstract

Admittance spectroscopy has been used to measure conduction‐ and valence‐band discontinuities in Si/Si_1−xGe_x heterojunctions (0<x1−xGe_x films, and it decreased when the Si_1−xGe_x layers started to relax. These results indicate that admittance spectroscopy can be used to monitor the electronic properties of transistorlike Si/Si_1−xGe_x/Si heterostructures.

Keywords

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