Application of AlGaAs/GaAs ballistic collection transistors to multiplexer and preamplifier circuits
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Performance dependence of InGaAs MSM photodetectors on barrier-enhancement layer structuresElectronics Letters, 1992
- 12-Gb/s decision circuit IC using AlGaAs/GaAS HBT technologyIEEE Journal of Solid-State Circuits, 1990
- 11 Gbit/s multiplexer and demultiplexer using 0.15 μm GaAs MESFETsElectronics Letters, 1990
- 9 GHz bandwidth, 8–20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technologyElectronics Letters, 1989
- Fully self-aligned AlGaAs/GaAs heterojunction bipolar transistors for high-speed integrated-circuits applicationIEEE Transactions on Electron Devices, 1988
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off processIEEE Electron Device Letters, 1987
- Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layerElectronics Letters, 1987