Quantum interference in SiO2: A conduction-band mass reappraisal

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Abstract
Quantum oscillations arising from interference in over-the-barrier injected electrons crossing a metal–oxide–semiconductor structure were observed for a 2.8 nm SiO2 layer. Model calculations that include image force effects are fitted to the data to obtain a conduction-band mass of mox=(0.63±0.09)m0. The field dependence of the oscillations was used to deduce the polarity and magnitudes of oxide charge induced by the high fluence of electrons injected with the scanning tunneling microscope during spectral acquisitions.