Tunneling Study of Localized States in Reserved Region of Sb-Doped Si
- 1 January 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (1)
- https://doi.org/10.1143/jjap.20.291
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Variable Range Hopping Assisted Tunneling in Pb-Sb Doped Si Schottky Tunnel JunctionJapanese Journal of Applied Physics, 1980
- Compensation independence of anomalous metal-semiconductor tunneling near the Mott transitionPhysical Review B, 1975
- Electron tunneling into amorphous germaniumPhysical Review B, 1975
- THE DENSITY OF STATES IN METAL-SEMICONDUCTOR TUNNELINGApplied Physics Letters, 1967
- Study of Electronic Band Structures by Tunneling Spectroscopy: BismuthPhysical Review Letters, 1965