Optical probing of Auger-governed decay of laser-induced plasma in InSb
- 16 April 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 58 (2) , K211-K214
- https://doi.org/10.1002/pssa.2210580271
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Carrier density dependence of Auger recombinationSolid-State Electronics, 1978
- Fast transient spectroscopy of the free-carrier plasma edge in GeApplied Physics Letters, 1976
- Electron-hole pair production and gunn effect in InSbSolid State Communications, 1969
- Bulk Quantum Efficiency in Indium AntimonidePhysica Status Solidi (b), 1969
- Recombination in Semiconductors by a Light Hole Auger TransitionPhysica Status Solidi (b), 1967
- Electron impact ionization in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959