Spontaneous lateral alignment of multistacked In0.45Ga0.55As quantum dots on GaAs(311)B substrate
- 1 April 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 200 (1-2) , 77-84
- https://doi.org/10.1016/s0022-0248(98)01286-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Intermixing and shape changes during the formation of InAs self-assembled quantum dotsApplied Physics Letters, 1997
- Spontaneous lateral alignment of In0.25Ga0.75As self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxyApplied Physics Letters, 1997
- Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxyJournal of Crystal Growth, 1997
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Anisotropic Optical Matrix Elements in Quantum Wells with Various Substrate OrientationsJapanese Journal of Applied Physics, 1994
- Self-Organization of Boxlike Microstructures on GaAs (311)B Surfaces by Metalorganic Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Effect of strain on surface morphology in highly strained InGaAs filmsPhysical Review Letters, 1991
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics, 1980