An extension of the model for the extracurrent in almost ideal silicon junction diodes
- 15 August 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (4) , 1230-1232
- https://doi.org/10.1063/1.334056
Abstract
The model which ascribes the deviation from ideality of the behavior of almost ideal silicon junction diodes to a current due to donor-acceptor twins is (1) substained by the analysis of the reverse current-voltage characteristics of diodes with different substrate concentrations, and (2) extended to take into account the spatial variation of the electric field in the depletion layer.This publication has 2 references indexed in Scilit:
- Mechanism of non-Shockley conduction in almost ideal silicon junction diodesJournal of Applied Physics, 1984
- A comparison of gettering techniques for very large scale integrationJournal of Applied Physics, 1984