Optical investigations of GaAs-Ga(Al)As interfaces in quantum wells
- 3 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1-3) , 531-537
- https://doi.org/10.1016/0039-6028(86)90882-4
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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- Determination of the conduction-band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance-voltage measurementsApplied Physics Letters, 1985
- High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctionsApplied Physics Letters, 1984
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- Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Electronic Properties of Flat-Band Semiconductor HeterostructuresPhysical Review Letters, 1981
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- Summary Abstract: Optical characterization of interface disorder in multiquantum well GaAs–AlxGa1−xAs superlattice structuresJournal of Vacuum Science and Technology, 1980