Contribution of the band-filling effect to the effective refractive-index change in double-heterostructure GaAs/AlGaAs phase modulators
- 1 December 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (11) , 4548-4553
- https://doi.org/10.1063/1.339048
Abstract
In this work we have theoretically estimated the effective refractive‐index variation Δneff due to the removal of carriers in the depletion region of a double‐heterostructure (DH) n‐AlGaAs/n‐GaAs/p‐AlGaAs phase modulator when a reverse bias is applied to this structure. Δneff is calculated by a Kramers–Kronig analysis of the absorption spectrum, which changes around the absorption edge because of the band‐filling effect associated with the presence of carriers. We also calculated the phase shift Δφ due to Δneff, and we showed that this contribution due to the band‐filling effect can account for up to 28% of the total phase shift for a specific DH structure, showing in this way that the band‐filling effect can no longer be ignored in the analysis of phase modulators.This publication has 12 references indexed in Scilit:
- Electrorefraction in GaAs and InGaAsP and its application to phase modulatorsJournal of Applied Physics, 1987
- InGaAs/InP multiple quantum well waveguide phase modulatorApplied Physics Letters, 1987
- InGaAsP/InP optical switches using carrier induced refractive index changeApplied Physics Letters, 1987
- Orientation dependence of the phase modulation in a p-n junction GaAs/AlxGa1−xAs waveguideApplied Physics Letters, 1987
- Highly efficient waveguide phase modulator for integrated optoelectronicsApplied Physics Letters, 1986
- Quadratic electro-optic light modulation in a GaAs/AlGaAs multiquantum well heterostructure near the excitonic gapApplied Physics Letters, 1986
- Refractive index dependence on free carriers for GaAsJournal of Applied Physics, 1980
- Analytic approximations for the Fermi energy of an ideal Fermi gasApplied Physics Letters, 1977
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975
- Dispersion of the Index of Refraction Near the Absorption Edge of SemiconductorsPhysical Review B, 1964