Annealing Properties of Defects in B+- and F+-Implanted Si Studied Using Monoenergetic Positron Beams

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Abstract
Annealing properties of defects in F+- and B+-implanted Si were studied using monoenergetic positron beams. For F+-implanted specimen with a dose of 2×1013 F/cm2, before annealing treatment, the mean size of the open volume of defects was estimated to be close to the size of divacancies. After rapid thermal annealing (RTA) at 700° C, vacancy-fluorine complexes and vacancy clusters were formed. The mean size of the open volume for the vacancy-fluorine complexes was estimated to be close to the size of monovacancies, and their annealing temperature was determined to be 800° C. For F+-implanted specimen with a dose of 4×1015 F/cm2, complexes between vacancy clusters and fluorine atoms were introduced during solid-phase epitaxial growth of the amorphous region, and they were observed even after RTA at 1100° C. Effects of additional B+ implantation on annealing properties of defects are also discussed.