Quantitative EBIC Investigations on Bulk Stacking Faults in Silicon
- 16 February 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 81 (2) , K131-K135
- https://doi.org/10.1002/pssa.2210810249
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Influence of the Generation Distribution on the Calculated EBIC Contrast of Line DefectsPhysica Status Solidi (a), 1982
- On the EBIC Contrast of Dislocations in SiPhysica Status Solidi (a), 1982
- EBIC/TEM Studies on the Relation between Electrical Properties, Crystallographic Structure, and Interaction with Point Defects of Epitaxial Stacking Faults in SiliconCrystal Research and Technology, 1982
- A contribution to the theory of the EBIC contrast of lattice defects in semiconductorsUltramicroscopy, 1981
- On the sensitivity of the EBIC technique as applied to defect investigations in siliconPhysica Status Solidi (a), 1981
- An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers. II. EBIC images of dislocationsPhysica Status Solidi (a), 1981
- An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers: I. Minority carrier generation, diffusion, and collectionPhysica Status Solidi (a), 1981
- Electron states associated with partial dislocations in siliconPhysica Status Solidi (b), 1979
- Electrical Activity of Epitaxial Stacking FaultsJournal of the Electrochemical Society, 1977