Magnetic-field-guided motion of electrons in a bulk semiconductor
- 16 April 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (16) , 1951-1954
- https://doi.org/10.1103/physrevlett.64.1951
Abstract
The free-electron cyclotron resonance in n-GaAs with rather weak impurity doping in a regular sequence of sheets shows a strong dependence of the carrier scattering rate on the direction of the applied magnetic field B. For the case of B directed exactly along the sheets we find a linewidth narrowing of more than a factor of 4. This effect is due to the B aligned trajectory of the circling electrons which extends along, but outside of the doping sheets. Our experiment is the direct observation of an anisotropic distribution of scatterers in an otherwise isotropic semiconductor.Keywords
This publication has 6 references indexed in Scilit:
- Electronic transport of the delta -doping layer in the dilute density limitSemiconductor Science and Technology, 1989
- Coherent electron focusing with quantum point contacts in a two-dimensional electron gasPhysical Review B, 1989
- Cyclotron resonance in donor and acceptor δ-doped As/GaAs heterostructuresPhysical Review B, 1989
- Non-parabolicity and anisotropy in the conduction band of GaAsSolid State Communications, 1987
- Delta- (°-) doping in MBE-grown GaAs: Concept and device applicationJournal of Crystal Growth, 1987
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978