Studies on the preferred orientation changes and its influenced properties on ITO thin films
- 1 May 1997
- Vol. 48 (5) , 463-466
- https://doi.org/10.1016/s0042-207x(96)00309-0
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Electrical and structural properties of indium tin oxide films deposited by reactive DC sputteringJournal of Physics D: Applied Physics, 1995
- Study of annealed indium tin oxide films prepared by rf reactive magnetron sputteringVacuum, 1995
- Effects of Magnetic Field Gradient on Crystallographic Properties in Tin-Doped Indium Oxide Films Deposited by Electron Cyclotron Resonance Plasma SputteringJapanese Journal of Applied Physics, 1994
- Effect of bias and post-deposition vacuum annealing on structure and transmittance of ITO filmsVacuum, 1992
- Structural Study of Tin‐Doped Indium Oxide Thin Films Using X‐Ray Absorption Spectroscopy and X‐Ray Diffraction: I . Description of the Indium SiteJournal of the Electrochemical Society, 1992
- Reaction kinetics of the formation of indium tin oxide films grown by spray pyrolysisThin Solid Films, 1990
- Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobilityThin Solid Films, 1990
- Temperature dependence of transport properties of evaporated indium tin oxide filmsThin Solid Films, 1987
- Efficient electron-beam-deposited ITO/n-Si solar cellsJournal of Applied Physics, 1979
- The effect of tin additions on indium oxide selective coatingsJournal of Physics D: Applied Physics, 1978