Effect of bias and post-deposition vacuum annealing on structure and transmittance of ITO films
- 31 August 1992
- Vol. 43 (8) , 835-836
- https://doi.org/10.1016/0042-207x(92)90147-o
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Low voltage magnetron discharges for thin film preparationVacuum, 1991
- Effect of the oxygen absorption on properties of ITO layersVacuum, 1989
- Effect of post-deposition vacuum annealing on properties of ITO layersVacuum, 1988
- Effects of residual gases and rf power on ITO rf sputtered thin filmsVacuum, 1987
- Effects of the atmosphere on the resistance of ITO thin filmsVacuum, 1987
- Deposition of In2O3SnO2 layers on glass substrates using a spraying methodThin Solid Films, 1981