Diffusion of paramagnetic defects in amorphous silicon
- 1 January 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (1) , 56-59
- https://doi.org/10.1103/physrevlett.64.56
Abstract
The diffusion coefficient of the dominant (g=2.0055) paramagnetic defect (D center) in amorphous silicon is determined to be less than half the diffusion coefficient for hydrogen. High-D-center densities are found to trap hydrogen. These results eliminate the possibility that the D center is responsible for hydrogen motion in hydrogenated amorphous silicon.Keywords
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