The effect of grain orientation on the relaxation of thermomechanical stress and hillock growth in AI-1%Si conductor layers on silicon substrates
- 1 June 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (6) , 607-610
- https://doi.org/10.1007/bf02666405
Abstract
No abstract availableKeywords
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