Blue-green optically pumped GaN-based vertical cavity surface emitting laser
- 31 July 2008
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 44 (16) , 972-974
- https://doi.org/10.1049/el:20081747
Abstract
Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta2O5/ SiO2 distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm at room temperature under optical pumping. Threshold energy density and emission linewidth were 189 mJ/cm2 and 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.Keywords
This publication has 17 references indexed in Scilit:
- CW lasing of current injection blue GaN-based vertical cavity surface emitting laserApplied Physics Letters, 2008
- Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structureElectronics Letters, 2007
- Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasersApplied Physics Letters, 2006
- Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflectorApplied Physics Letters, 2005
- Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectorsApplied Physics Letters, 2003
- A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laserApplied Physics Letters, 2000
- Room Temperature Lasing at Blue Wavelengths in Gallium Nitride MicrocavitiesScience, 1999
- The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser DiodesScience, 1998
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994